| 摘要 |
PURPOSE:To prevent the photochemical reaction of a reflection surface and enable a laser oscillation of good efficiency at a low oscillation threshold value by a method wherein the side surface of a mesa lamination body including an active layer is formed in such a structure that it is surrounded by a layer of a forbidden band width larger than that of the active layer. CONSTITUTION:Al0.6Ga0.4As layers 12 and 14 are so arranged as to sandwich an Al0.05Ga0.95As layer 13 serving as the active layer from above and below. This constitution enables selective removal including the layer 13 by an etching process, since etching speed is high for the layers 12 and 14; therefore the layer 13 can be easily positioned inside the end surface of a resonator. Next, an N type Al0.3Ga0.7As layer 17, a P type Al0.3Ga0.7As layer 18, and an N type Al0.3 Ga0.7As layer are so formed successively as to fill the clearance between the side part of this mesa lamination body, the end surface of the resonator, and the layers 12, 14, and 13. Thereby, the side surface of the mesa lamination body including the layer 13 becomes in such a structure that it is surrounded by the layers 18 and 19 of the forbidden band width larger than that of the layer 13, the carriers injected into the layer 13 are not transversally diffused, and accordingly can be made to contribute to luminous recombination with good efficiency. |
