MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a semiconductor device with improved high temperature characteristics by a method wherein when a groove is formed on the surface of a semiconductor substrate and a glass insulation layer is adhered to the inside of the groove and the edge of the aperture, zinc system glass is introduced as the glass and the glass layer is covered with a silicon nitride film and an electrode forming portion of the surface of the substrate is processed by surface treatment. CONSTITUTION:A groove 13 is formed on the surface of a semiconductor substrate 11 and an insulation material 14 made of Zn system glass is electrolytically adhered to a P-N junction 12 exposed in the inside wall of the groove 13 and to the circumference of the aperture. The material 14 is left on the SiO2 film 15 as small particles 16 but they will have no problem because they will be removed by the following selecting etching process. Then the substrate 11 is baked at the required temperature and the material 14 is turned to a glass layer 17 and an Si3N4 18 is formed on the film 15 and the glass layer 17. A photoresist film 19 is formed on the surface other than the region where the electrode is formed and the film 15, with small particles 16 adhered on it, is removed by etching.