| 摘要 |
PURPOSE:To obtain a device of a high density and high speed by a method wherein the work function of a MISFET gate is set by a high melting point metal or a silicide thereof having higher function than an N<+> poly Si in a P channel, and by the N<+> poly Si in a N channel. CONSTITUTION:A P well 4 and a field oxide film 5 are provided on an N type substrate 3, the threshold value is controlled by ion implantation, and thereafter a gate oxide film 6 is formed. Next, the N<+> poly Si 7 by CVD method and a double layer structure of an Mo or an MoSi2 8 by sputtering method are provided on the P well 4, and the MoSi2 8 selectively on the other substrate. Successively, the source and drain 9 of the P channel FET and the source and drain 10 of the N channel FET are formed, an Al wiring and a protection film are provided, resulting in completion. The thickness of the MoSi2 is determined according to the demand of an operation speed. This constitution enables to obtain the device of the high density and high speed operation by the alleviation of short channel effect or punch-through phenomenon in respect to the fine formation of elements. |
