| 摘要 |
PURPOSE:To obtain another semiconductor device by a method wherein a radioactive isotope which emits beta<+> or beta<-> radiation or a thin plate or a lattice of the metal is buried in each part of a gate, a source, and a drain of a semiconductor substrate, thus being decided as an electrode. CONSTITUTION:In the source 2, closest to bi-poles of the polar surface of the gate 1 and that of the drain 3, the fixed radioactive isotope or the element metal thereof is buried as the electrode in thin film or lattice form. When the beta<+> radioactive isotope 5 is contained in the source 2, position rays extinguish electrons in the source and reflect positive holes. The beta<-> type element acts reversely. Next, when such an element or the thin plate thereof is covered with an extremely thin insulation film and then buried at the same position, the electrons gather outside the insulation film which covers the beta<+> element, and disappear when the electrode is negatively biased in high degree. The beta<-> element acts reversely. Such electrodes are alternately provided in the source, the gate, and the drain. This constitution enables to hasten the access time to an RAM and an ROM and thus to largely increase the amount of memory. |
