| 摘要 |
PURPOSE:To securely fuse a wiring with a lower current by providing a current- fusing type poly-Si fuse wiring crossing a trapozoidal region of insulating film formed on a semiconductor substrate and by making smaller the cross-sectional area of trapezoidal region than the other region. CONSTITUTION:A trapezoidal region 13 is selectively formed on a filed oxide film 12 on a substrate 11 by a photo etching technology. A current fusing-type poly-Si fuse wiring 15 which is thin and has an area 14 having higher resistance than the other area is provided on the region 13 crossing the region 13, it is then connected to the aluminum wirings 17, 17' of the main circuit on a recessed part 16 of the oxide film 12, and it is covered with a PNG 18. The wiring 15 has the dimensions, for example, that thickness is 0.4mum, width of functional part w1 is 1.5mum, length is 10mum, and a specific resistance is 10<-3>ohm-cm<-2>. The region were l' is 2mum is formed to a thickness t' as thin as 0.2mum in the high resistance area 14. In such a structure, a temperature rise efficiency at the region 14 is very good and a fusing current can be reduced and the PSG film 18 at the upper part of fuse does not suffer from any damage. |
