| 摘要 |
PURPOSE:To increase the reliability of a MOS-type semiconductor device which is manufactured by an electron beam direct image drawing method or an X-ray exposure method, by forming an insulating film contacting with a semiconductor substrate with silicon oxide nitride film, and performing an oxygen annealing. CONSTITUTION:Except the forming method of a gate insulating film, conventional technical arts are used. After an insulating film 2 for element separation is formed on the surface of a P-type Si substrate 1, the gate insulating film 3 is formed. Successively an oxygen annealing is performed under the conditions, for example, at a temperature of 1,000 deg.C, for about 20min and O2=5l/min, and the gate insulating film is completed. Then a poly Si gate 4 is formed, and a source.drain diffusion layer 5 is formed by an ion implantation. Thus a MOS transistor is constituted. Electron beam direct image drawing method is applied to all the lithography technology in this manufacturing process. |
