| 摘要 |
PURPOSE:To protect information from being erased by floating charge by a method wherein a groove type capacitance unit is provided between the region where a memory cell unit is formed and the region where a peripheral circuit is formed to capture the floating charge. CONSTITUTION:Information is stored by a memory cell in such a manner that the information from a diffused layer 2 which is a digit line is controlled by the gate electrode 6 of a switching MIS transistor and the charge is stored in the boundary between a capacitance insulating film 10 contacted with a capacitance gate electrode 7 and a diffused layer 3. Between the region where the unit of the arranged parts 3, 7 and 10 of the memory cell is formed and a peripheral circuit, the 2nd capacitance part composed of the parts 3', 7' and 10 which has a groove type structure and whose capacitance gate electrode 7' is given the earth potential through an insulating film 4' is formed to capture the floating charge which has polarity opposite to that of the charge stored in the substrate side. |
