| 摘要 |
PURPOSE:To improve reverse withstanding voltage in a photodiode having a structure of metal/a-Si:H/ITO, by providing an insulating thin film between a semiconductor thin film and a first stripe electrode or a second electrode, at a part where the end surface of the first stripe electrode and the end surface of the second electrode are crossed with each other. CONSTITUTION:After Cr is evaporated on a glass substrate 1 by sputtering, a stripe electrode 2 is machined by etching. An a-Si:H film 3 is formed on the electrode by a plasma CVD method and finely machined into an island shape by photoetching. SiO2 is evaporated thereon by sputtering. SiO2 9 is made to remain in an island shape only at a part, where the end part of the Cr stripe electrode 2 and the end part of the ITO electrode 4 are crossed. An ITO is formed thereon by sputtering method and machined into a stripe shape by photoetching. Thus the transparent electrode 4 is formed. A protecting film 5 is further formed. a scanning IC is die-bonded. A sensor and the IC and connected with a wire. Thus a one-dimensional photodiode is completed.
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