| 摘要 |
PURPOSE:To manufacture the thin-film of a minute pattern easily in a short time by passing beams, through which a photochemical reaction is generated, through a transfer mask and radiating the beams on a semiconductor substrate in a reaction fluid atmosphere. CONSTITUTION:The inside of a vessel 4 is evacuated, and SiH4 gas and N2O gas are introduced as reactive gases. Mercury-arc lamp beams are emitted from a light source 6, and passed through a first optical system 7 and radiated on the mask 8. Incident beams passing through the mask 8 pass through a second optical system 9 and are adjusted, and transmit through a transparent plate 5 and are radiated on the semiconductor substrate 1 in the vessel 4 by a necessary pattern. The thin-film 10 by a silicon oxide film is formed through the photochemical reaction in a section, on which the beams are irradiated, on the substrate 1. |
