| 摘要 |
PURPOSE:To prevent the cracking of a semiconductor while adjusting a mesa shape by fast sticking the other surface of the semiconductor, to a predetermined region of one surface thereof a protective layer is formed, on a metallic plate, coating the side surface of the semiconductor with an etching-resisting material and dipping the semiconductor in an etching liquid. CONSTITUTION:A protective pattern 2 is formed to the upper surface of a semiconductor board 1, and the semiconductor board 1 is pasted on the metallic plate 10 with pitch 12 so that the side surface section 9 and fringe section 11 of the semiconductor board 1 are coated completely. The metallic plate 10 resists the etching liquid, and a stainless steel plate is used for it. The semiconductor board 1 is not cracked in an etching process because it is reinforced mechanically by the metallic plate 10, and end sections are not changed into accute angles because the side surface of the semiconductor is protected completely with pitch 12. Variance is reduced in the shape of an etching groove because the temperature of the semiconductor board 1 is kept constant in surfaces by the thermal conduction of the metallic plate 10. |
