| 摘要 |
PURPOSE:To etch a minute pattern easily by positioning a semiconductor base body in a reactive fluid atmosphere and irradiating beams, through which a photochemical reaction is generated by a reactive fluid, to the semiconductor base body through a transfer mask. CONSTITUTION:A semiconductor substrate 1, an upper surface thereof has a thin-film 2, is encased in a sealed vessel 4, and laser beams are irradiated through a transparent plate 5. The inside of the vessel 4 is evacuated by an exhaust port 4b, and Cl2 is introduced as a reactive gas from an introducing port 4c so that pressure reaches approximately 200Torr. Argon laser beams are outputted from a light source 6, and the upper section of a mask 8 is scanned at approximately 90mum/s speed through a first optical system 7. Laser beams passing through the mask 8 pass through a second optical system 9 and are adjusted, and transmit through the transparent plate 5 and irradiate the upper section of the thin-film 2 of the semiconductor substrate 1. The photochemical reaction is generated by the reactive gas in a section irradiated by laser beams, and the section is etched. |
