发明名称 |
Method for manufacturing field effect transistors |
摘要 |
A transistor and method of forming the same are disclosed. A thick mesa of dielectric material is grown on a semiconductor substrate and two or more layers of polycrystalline silicon grown on the vertical sides of the mesa serve a masking function to define the gate region of the transistor with high accuracy. The mesa and the two or more polycrystalline layers remain in the final device.
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申请公布号 |
US4442589(A) |
申请公布日期 |
1984.04.17 |
申请号 |
US19810240677 |
申请日期 |
1981.03.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DOO, VEN Y.;TSANG, PAUL J. |
分类号 |
H01L21/8234;H01L21/033;H01L21/336;H01L27/088;H01L29/423;H01L29/78;(IPC1-7):H01L21/26;H01L21/28 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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