发明名称 |
CMOS Integrated circuit device |
摘要 |
An improved CMOS device and method of making it are provided which utilize basically the standard N-channel self-aligned silicon gate structure and process, modified to include a P-channel transistor. A P-type substrate is used as the starting material, with an N-type tank formed for the P-channel transistor. Field oxide is grown after the N-type tank is formed. A polycrystalline silicon layer is deposited and patterned to create gates for both N- and P-channel transistors, then separately masked P- and N-type diffusions or implants form the sources and drains for the two types of transistors.
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申请公布号 |
US4443811(A) |
申请公布日期 |
1984.04.17 |
申请号 |
US19810310019 |
申请日期 |
1981.10.13 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TUBBS, GRAHAM S.;PONDER, JAMES E. |
分类号 |
H01L21/033;H01L21/265;H01L21/266;H01L21/762;H01L21/82;H01L21/8238;(IPC1-7):H01L27/02;H01L29/78;H01L29/04 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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