| 摘要 |
PURPOSE:To make it possible to compare the concn. of carbon with respect to a silicon nitride film having a different film forming condition, by performing the mass analysis of a secondary ion on the basis of two kinds of ionic strengths of the single atomic ion and molecular ion of carbon. CONSTITUTION:When a silicon nitride film is measured by secondary ion mass analysis, two kinds of a single atomic ion (<12>C<->) and a molecular ion (<12>C<14>N<->) are measured as ions relating to carbon. These iions reflect the presence state of carbon in the film and the relation between carbon concn. [C] and ionic strength is represented by a formula (where, [C<->] and [CN<->] are ionic strength and alpha and beta are constants). The concn. of carbon in the film can be calculated from said formula by preparing two or more kinds of standard specimens of which the concns. are known.
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