| 摘要 |
PURPOSE:To uniformize ashing by spraying ozone gas from a gas inlet tube to a substrate to be processed, floating the substrate to the vicinity of the inlet of the tube, and processing to ash it with the gas. CONSTITUTION:An oxygen gas containing 0.5-5% of zone is fed through an ozonizer from a gas inlet tube 2 into an ashing chamber 10 to be sprayed to a wafer 1. Then, the gas is fed sidewisely on the wafer, further fed from many outlets 11 on the upper surface of the chamber 10 and ashed in reaction with a resist film on the ozone gas wafer. A Bernoulli's effect occurs due to the gas flow so that the ozone is uniformly contacted readily on the entire wafer to accelerate a reaction of the resist film on the wafer with the ozone. Thus, since the ashing is uniformly and rapidly executed, it can contribute remarkably to make an IC into a high quality one.
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