| 摘要 |
PURPOSE:To save treating gas and to perform efficient treatment with high uniformity, by providing the openings of gas introducing pipes so as to face the surface of each wafer, which is attached to a susceptance electrode in a vacuum reaction chamber, and flowing out the gas after the treatment from the surrounding part of each wafer. CONSTITUTION:The openings of gas paths 9 are provided at a plurality of positions at the lower surface of a facing electrode 3. A needle shaped throttle valve 13, which can regulate a treating gas so that the uniform amount of the treating gas is flowed out of each opening, is provided. A plurality of annular quartz bodies 11 are attached to the lower surface of the facing electrode 3, with the opening of the gas path as a center. When the lower side of the annular body 11 is contacted with the upper surface of the disk of a susceptance electrode 4, a small reaction chamber 10 containing each wafer 5 is formed. The treating gas is blown to the center of the surface of the wafer 5, flowed to the surrounding part thereof, and uniformly flowed out of an exhausting port 12 around the wafer 5. Thus, highly accurate treatment can be efficiently performed on the surfaces of a plurality of wafers, and the treatment can be performed with a smaller amount of the treating gas. |
