| 摘要 |
PURPOSE:To provide a connecting hole capable of effectively connecting between wirings with high reliability and to improve the integration of multilayer wirings by forming a tapered conduction hole in the first insulating film formed on the first wirings on a substrate, and forming the second wirings thereon. CONSTITUTION:A through hole 5 is formed by anisotropic dry etching to lower wirings 3 at an insulating film 4 on the wirings 3 of the first layer. Further, when the same insulating film 6 as an insulating film 2 is entirely deposited by a planar bias sputtering technique, an opening 7 of a through hole 5 is formed in a tapered shape. Then, the entire surface is uniformly etched by anisotropic dry etching, the film 6 is removed, and the opening 7 is formed to an opening 8 reduced further in the sharpness. Thereafter, the upper wirings 9 of the second layer of aluminum is formed, and an insulating film 10 is formed on the wirings 9. |
