发明名称 SURFACE MODIFYING DEVICE
摘要 PURPOSE:To make a hard film of good quality excellent in controllability formable at high speed, by installing a plasma chamber between a sample table of a surface modifying device using an ion beam and a mass separator, while disposing a sample base plate in a plasma atmosphere. CONSTITUTION:Ion beams 3' out of an ion source 1 are mass-separated into only a carbon ion beam by a mass separator 2, then decelerated by a dedelerating electrode 5 of an analytical tube 3 and accumulated on a base plate 6, thus a hard film is made up. At this time, a plasma forming chamber 12 is installed between the decelerating electrode 5 and the base plate 6 and gas is led thereinto, while high-frequency power is fed to a coil 7, producing plasma 13, and the base plate 6 is disposed so as to be exposed to the plasma 13. Therefore, as a radical supply source, the radical content is high in terms of density, and such plasma as capable of exerting no influence upon the beam system is utilized whereby a diamond film of good quality excellent in both controllability and reproducibility can be formed at high speed.
申请公布号 JPS5966045(A) 申请公布日期 1984.04.14
申请号 JP19820176140 申请日期 1982.10.08
申请人 HITACHI SEISAKUSHO KK 发明人 TOKIKUCHI KATSUMI;SAKUMICHI KUNIYUKI;SUZUKI KEIZOU;OKADA OSAMI
分类号 H01J37/317;H01L21/265 主分类号 H01J37/317
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