| 摘要 |
PURPOSE:To lower the base resistance of a semiconductor device by simultaneously opening a base contact and an emitter part at an insulating film on a base region, forming a polycrystalline silicon layer containing an impurity in the vicinity of the emitter window, then introducing a high density impurity to the base contact part and forming the emitter region by a heat treatment. CONSTITUTION:A base forming window is formed on an N type collector region 1, a P type base layer 2 is formed, and an oxidized film 5 is formed by thermal oxidizing on one surface. Then, a silicon nitrided film 8 is formed on the overall surface, and an emitter window 9 and a base contacting window 10 are then simultaneously formed. Subsequently, a polycrystalline silicon 11 containing N type impurity is formed on the overall surface, the silicon 11 is then removed except the emitter window and the vicinity thereof, and the photoresist 12 remains as it is. Thereafter, P type impurity is passed through the films 8, 5 to form a high density base contacting region 3. Then, the photoresist 12 is removed, an impurity is diffused from the layer 11 to form an emitter layer 4. According to this method, the distance between the emitter 4 and the high density base contacting region 3 can be shortened. |
