| 摘要 |
PURPOSE:To enable to prevent improper wirings due to stepwise disconnection of aluminum wirings by forming the upper or lower layer of the wirings in a 2- layer structure formed with wirings of polysilicon layer. CONSTITUTION:A contacting hole 14 opened at a diffused layer 12 is formed on an insulating film 13 formed of a silicon oxidized film of the upper surface of a wafer formed of the layer 12 in a substrate 11. An aluminum layer 20 is covered as the first conductive layer on the entire surface of the wafer, and a polysilicon layer 21 is further laminated as the second conductive layer on the layer 30, photoetched in the prescribed wiring pattern, and the wiring layer 22 of the 2- layer structure of the layers 20, 21 is formed. Thereafter, a PSG film 23 is covered as a protective film on the upper surface of the wafer, and a PSG film 23 and the layer 21 are photoetched to expose the layer 30 for bonding. In this manner, even if the layer 20 is stepwisely disconnected, the layer 21 of upper layer is formed uniformly along the surface of the contacting hole, and the whole wiring layer 22 is not entirely disconnected. |
