| 摘要 |
The invention relates to a field-effect transistor with ultra-short gate length. The transistor according to the invention comprises a highly conductive substrate 8, and an active layer 9. An ohmic metallisation 15 on the substrate 8, forms the source. A Schottky metallisation on the active layer 9 is etched so as to form a drain contact 16 located between two gate-contact elements 10, 20. Control of the current between source and drain 15, 16 is obtained by pinching between two deserted regions 12, 22 which, under bias, form under the gate metallisations 10, 20. The gate length is equal to the thickness of the active layer (0.05 to 0.5 micron). With very high frequencies in mind, the materials are preferably of n type. Application to very high frequency systems. <IMAGE>
|
