FORMATION OF FINE PATTERN

摘要

PURPOSE:To obtain a fine pattern by reactive ion beam etching easily by a method wherein a fine pattern is formed of an upper photoresistor of a positive photoresistor and transferred to a lower photoresistor of a negative photoresistor and used as a masking. CONSTITUTION:A negative resistor 32 is formed as the 1st photoresistor and a positive resistor 33 is formed as the 2nd photoresistor on a semiconductor substrate 31. A pattern is formed of the positive resistor 33 and the substrate 31 is put into a reactive ion etching equipment and oxygen gas 35 is introduced into the equipment and unisotropic etching is applied to the negative resistor 32 using the pattern of the positive resistor 33 as a masking and at the same time the positive resistor 33 is removed. Then the substrate 31 is put into a reactive ion beam etching equipment and anisotropic etching is applied to the semiconductor substrate 31 using the negative resistor 32 as a masking and the negative resistor 32 is removed. The pattern of the positive resistor 33 is accurately transferred to the semiconductor substrate 31.