| 摘要 |
PURPOSE:To form an amorphous silicon film with uniform film quality at a high speed, in forming the amorphous silicon film from monosilane on a substrate in a plasma CVD apparatus for preparing an electrophotographic photosensitive drum, by heating the electrode in said apparatus. CONSTITUTION:A shower 8 for use with an electrode and a susceptor 9 having a sample substrate 12 placed thereon are arranged in a vacuum tank 7 which is, in turn, exhausted and reduced in pressure from the exhaust port 13 thereof while high frequency voltage is applied between the electrode 8 and the susceptor 9 from a power source 11 and glow discharge is created to generate plasma. Monosilane supplied into the vacuum tank 7 from a bomb 1 is decomposed to form an amorphous silicon film on the substrate. In this case, by heating the electrode by an infrared lamp, it is prevented that the exhaust port is clogged by the generation of yellow snow caused by the decomposition of monosilane to delay the forming speed of the amorphous silicon film and film thickness becomes non-uniform. |
