发明名称 |
COMPOSITION ALLY VARIED SEMICONDUCTOR MATERIAL |
摘要 |
Materials are provided containing nonperiodically distributed local environments whose position and type are controlled to obtain specific properties which can be coupled or decoupled one from another and collectively from the constraints implied by an ordered structure. The compositional variation is accomplished by selectively depositing atoms and groups of atoms by means, e.g., of ion beams (16, 18 etc.) into designed locations on a substrate (36) to construct a true three-dimensionally engineered material. Where order is needed, it can be designed in a local scale or interspersed in varying amounts including layers through the material to create new material functions. |
申请公布号 |
AU1938483(A) |
申请公布日期 |
1984.04.12 |
申请号 |
AU19830019384 |
申请日期 |
1983.09.22 |
申请人 |
ENERGY CONVERSION DEVICES INC. |
发明人 |
STANFORD ROBERT OVSHINSKY |
分类号 |
H01L31/0248;C23C14/02;C23C14/04;C23C28/00;C30B23/02;C30B23/04 |
主分类号 |
H01L31/0248 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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