| 摘要 |
<p>An interconnect structure for integrated circuits having a layer of aluminum (16) and a layer of refractory metal silicide (17) on the aluminum layer (16) to form an aluminum-silicide composite layer. Ranges of suitable thicknesses for the aluminum and metal silicide layers are disclosed. Molybdenum (Mo) and tantalum (Ta) may be used as the refractory metal in the metal silicide layer. Also disclosed is a method of manufacturing an interconnect structure in an integrated circuit providing a first insulating layer (12) over a semiconductor substrate having a plurality of active regions (11) at the surface of the semiconductor substrate (10), forming a first aluminum layer (16) over the first insulating layer (12), forming a metal silicide layer (17) over the aluminum layer (16), and selectively removing parts of the first aluminum layer (16) and the metal silicide layer (17) in a predetermined pattern whereby an aluminum-metal silicide interconnect structure is formed coupling at least some of the active regions (11). </p> |
