| 摘要 |
PURPOSE:To form a pattern high in resolution using a pattern-forming material adequate as a negative resist made of a halogenated polystyrene type resin by incorporating at least one of three kinds of compounds having a cubic root of the swelling degree of the pattern-forming material after irradiation of ionizing radiation in the range of 1.0-1.3. CONSTITUTION:The developing solution contains at least one of the compounds represented by formula (I), (II), and (III), and having a cubic root of the swelling degree of the pattern-forming material after irradiation of ionizing radiation in the range of 1.0-1.3. In the formulae, R<1> is 1-7C alkyl, alkenyl, aryl, or aralkyl, and (n) is 2 or 3. Said compounds are used alone or in combination of two or more in an amount of 30-100wt%, preferably, 50-100wt% of the developing solution. |
