| 摘要 |
PURPOSE:To obtain the diode, in which a plurality of photodiodes are separated excellently, by implanting impurity ions, changing the conduction type of an impurity and forming a junction region when a plurality of the photodiodes are formed adjoined onto the same substrate. CONSTITUTION:The N type Si substrate 1 of resistivity of at least 1KOMEGA.cm or more is prepared, neutron beams are radiated to a plurality of predetermined regions, and N type regions 21 and 22 are formed through annealing. Electrodes 41 and 44 are set up to these regions, P type ions are implanted into the regions 21 and 22, the surface is annealed by beams, P type ions compensate for N type ions decayed by neutron beams, and P type regions 31 and 32 are formed. Electrodes 42 and 42 are set up to the regions 31 and 32, and a pluraity of the photodiodes are obtained adjoined onto the substrate. Accordingly, diode groups are separated excellently. |
