| 摘要 |
PURPOSE:To control an anisotropic magnetic field and to make magnetization approach in the same direction as a whole in an MR element by providing uneven parts on a ferromagnetic thin film, and also making depth of these uneven parts different from each other. CONSTITUTION:As for a method for forming uneven parts whose depth is different from each other, on a substrate consisting of a ferromagnetic material such as Mn-Zn, etc., a stripe-like mask 6 of a photoresist is formed on a substrate 5, and the exposed part is etched by a method (etching) such as chemical etching, spatter-etching, ion milling, etc. Subsequently, a part is covered with a photoresist mask 7 and is etched again, and thereafter, when the resist is peeled off, the substrate 5 having uneven parts of optional depth is obtained. Also, when a stripe-like pattern of SiO2 for instance, is formed on the whole surface by a lift- off method by use of the photoresist mask, and thereafter, a part of the mask is covered with the resist and also SiO2 is laminated on the remaining part, the substrate 5 which is formed by a stripe-like SiO2 layer 8 and has uneven parts whose depth is different from each other is manufactured. |
