| 摘要 |
Disclosed ia a plasma etching apparatus in which an etching chamber accomodates a pair of parallel flat plate electrodes facing each other. The etching chamber is also provided with a device for applying high frequency power to one of the electrodes and a system for introducing a reactive gas. An after-treatment chamber is connected to the etching chamber and provided with a system for introducing a heated gas into the interior, a partition means for hermetically partitioning the etching chamber and after-treatment chamber, and a system for transporting the workpiece in the etching chamber into the after-treatment chamber.
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