| 摘要 |
PURPOSE:To form minute thick film patterns, by a metod wherein a thick film and a photoresist layer insoluble in an org. solvent are formed on a substrate and the resist film corresponding to an unnecessary portion of the thick film is removed by exposing and developing and, thereafter, etching is carried out by a solution containing terpineol in a predetermined cocn. CONSTITUTION:A thick film 2 and a resist film 3 insoluble in an org. solvent are formed on an insulating substrate 1. In order to remove an unnesessary portion of the thick film 2, the resist film 3 is exposed and developed to remove the resist film 3 corresponding to the unnesessary portion of the thick film 2 to expose the unnecessary portion. Subsequently, the unnecessary portion of the thick film is etched. To carry out this etching procedure, an etching solution of an org. solvent containing 5-100% of terpineol (containing alpha-,beta- and gamma-isomer mixture) is immersed in a spongelike member and puffed or sprayed and blowed on under high pressure to melt and remove said unnecessary portion. By peeling and baking the resist film 3 remaining on the thick film 2, the highly accurate patterning is easily carried out. |
