| 摘要 |
PURPOSE:To form an amorphous layer with very few defects and high photo- conductivity by introducing a hydride or a fluoride of at least one of silicon or germanium as a target. CONSTITUTION:A substrate 10 is heated by a heater 15, Mixture gas of argon and hydrogen is introduced through a valve 14 and the argon and the hydrogen are ionized between two electrodes 8, 9 by applying a high frequency voltage 18 between two electrodes 8, 9 while keeping a prescribed vacuum rate and targets 11-13 of amorphous silicon are sputtered by ionized argon and deposition is made on the substrate 10. P type amorphous silicon hydride is deposited on the substrate 10 facing the target 11, genuine amorphous silicon hydrite is deposited on the substrate 10 facing the target 12 and N type amorphous silicon hydride is deposited on the substrate 10 facing the target 13. With this constitution, while the substrate 10 is conveyed by the combination of rollers 16 and a belt 17, P type, genuine and N type silicon hydride 3-5 are successively deposited on the substrate 10 and by forming a metal layer 6 on the deposited layers, a thin film solar battery is obtained. |
