| 摘要 |
PURPOSE:To enhance productivity through the use of a large size ceramic substrate by individually separating the high temperature process and low temperature process in the manufacturing processes and the processes using ceramic plate are all included to the low temperature processes. CONSTITUTION:A pellet 5 is sequentially fixed on each block 12 of the submount member 11 through the Au-Si eutectic layer. At this time, the pellets are exposed to a temperature of 400 deg.C by the formation of Au-Si eutectic layer, but there is no problem because such it occurs during connection. A submount 8 wherein only one pellet 5 is secured is obtained by dividing the submount member 11, it is placed on the wiring layer 2 of the block 14 for manufacturing hybrid IC together with a small size resin package semiconductor device 4, and they are fixed with solder 7 by reflow. Such reflow is carried out under the ambient not including oxygen at a comparatively low temperature. Thereby any oxidation is not generated on the resistance layer 7 and wiring layer 2 formed on the ceramic substrate 1 and any fluctuation of resistance value is also not generated. The electrode of pellet and wiring layer 2 are connected with wire 10 by the ultrasonic wire bonding method and thereby a hybrid IC chip can be obtained by dividing it into blocks. |
