| 摘要 |
PURPOSE:To obtain a semiconductor device having a high resistivity of fatigue by heat cycle and a high resistivity to external stain by forming a second hard resin on a first hard resin deposited directly on the element through a soft substance film. CONSTITUTION:A semicnductor element 2 is connected on a heat radiating Cu plate 1 having a fixing screw 7, the other electrode of element 2 is connected to an external lead 9 through a wire 8 such as Au, an Si pellet 2 is covered with a first hard resin layer 10, this resin layer is then covered with a smooth and soft silicon oil film 11 and moreover surrounded by a second hard resin. A lead 9 is partly exposed to the outside from such resin mold. In such sealing structure, when the mold is tightened by inserting scres 13 into the holes 7, a stress is applied on the external second resin 12 but not to the pellet. Moreover, since the pellet is strongly pressed by the first hard resin layer, a high heat resistance fatigue strength and reliability can be acquired. |
