| 摘要 |
PURPOSE:To obtain a semiconductor device of high transconductance and moreover having a high Schottky withstand voltage by a method wherein a first semiconductor layer of a large electron affinity, an N type second semiconductor layer of a small electron affinity, an N type third semiconductor layer provided with a recess, and N type fourth semiconductor layers arranged placing the recess between them, etc., are provided. CONSTITUTION:The non doped layer 11, the N type AlGaAs layers 12, 13, and N type GaAs layers 14 are grown successively on a semi-insulting GaAs substrate, and a source electrode 16 and a drain electrode 17 are formed. Then a Schottky gate electrode 21 is formed on the N type AlGaAs layer 13 at the recess part provided with steps. Because the N type GaAs layers 14 are separated by the degree of 0.05-0.4mum from the gate electrode 21, the Schottky withstand voltage is enhanced, and moreover because width of the recess can be narrowed, series resistance can be reduced, and transconductance is increased. |
