| 摘要 |
PURPOSE:To eastablish a surface protecting method giving no adverse effect on the interface characteristic by forming a protection film with a compound semiconductor which has the lattice constant which is almost equal to that of a substrate to be processed and has a high resistance. CONSTITUTION:A compound semiconductor layer 5 having the lattice constant which is almost equal to that of a substrate 1 to be processed and a high resistance is formed on the surface of substrate 1 to be processed consisting of a compound semiconductor. Thereafter, a semiconductor device is manufactured through the heat treatment process. The lattice matching is almost done between the substrate 1 to be processed and protection film 5 of compound semiconductor layer and the interface level density is very small. Therefore, formation of protection film does not give any adverse effect on the interface characteristic. |
