| 摘要 |
PURPOSE:To reduce the demand for the accuracy of laser beam positioning by a method wherein a p-n junction part is irradiated with a laser beam while a breakdown is caused by impressing a reverse directional voltage on the p-n junction. CONSTITUTION:An n<+> layer 2, a p layer 3, and an n<+> layer 4 are successively formed on an SiO2 film 1, the layer 4 is earthed, and the layer 3 is put at the potential of +V. Thereby, the reverse directional voltage is impressed on the n<+>p junction 5, and a forward directional voltage is impressed on the p<+>n junction 6. Then, Joule heat is generated at the junction 5 by causing the breakdown. In this state, the junction 5 is fused by the irradiation of the laser beam. Since the fusion is enabled only by the Joule heat due to the breakdown + laser beam energy, even when the position of the irradiation of the laser beam is out of the target, the fusion does not generate at the place. Therefore, the accuracy of laser beam positioning is not highly demanded. |
