| 摘要 |
PURPOSE:To enhance the photoelectric conversion efficiency by obtaining an I-type layer of good film quality by a method wherein a plurality of I-type layers of a photovoltaic device are formed respectively in independent reaction chambers. CONSTITUTION:A pluraity of P-I-N junction type power generation regions 1-3 composed of amorphous semiconductors are laminated in the direction of light incidence, and accordingly the photovoltaic device wherein the optical forbidden band gaps of the I-type (intrinsic) layers I1-I3 of each region 1-3 are made different is manufactured. At the time, each I-layer is formed respectively in independent reaction chambers, and layers of the same conductivity type are formed in a common reaction chamber. In other words, e.g., the reaction chambers 16, 18, and 20 are decided as the forming chambers for the I1, I2, and I3 layers respectively, P type layers P1-P3 are formed commonly in the reaction chamber 17, and N type layers N1-N3 are formed commonly in the reaction chamber 19. Amorphous semiconductor layers are formed by moving a substrate 4 to each reaction chamber 16-20. Thereby, the mixture of reaction gas does not occur, and the film of good quality can be formed. |
