| 摘要 |
PURPOSE:To obtain a charge pump memory by LOSCOS method by a method wherein the side surface of a p type part is exposed by removing a part of a p type floating region on the drain region side, and then made to contact a drain electrode on this side surface. CONSTITUTION:A field oxide film 9 and a gate oxide film 7 are formed on an insulation substrate 1, and a gate electrode 8 on the film 7. Next, As is ion- implanted with the electrode 8 as the mask, resulting in the formation of n<+> regions 3 and 4, decided as a source region and a drain region, thereafter a part of the drain region 4 toward the film 9 and the p type part immediately thereunder are etched down to the substrate 1, and accordingly a hole 11 is provided. Then, the entire surface is covered with a PSG film 10, and the window opening for contact with a source electrode 5 and a drain electrode 6 is performed. Al is vapor-deposited during heating, and then the electrodes 5 and 6 are formed by patterning it. |
