| 摘要 |
PURPOSE:To improve an S/N rato and light response by flattening a common elctrode by a method wherein the photo receiving part of an element is filled with a transparent film oxidized at a part of an oblique conductive film. CONSTITUTION:The oblique conductive film 12 of Ta, Ti, Al, Nb, Si, etc. is formed on an insulation transparent substrate 11 which receives a signal light 10 on the lower surface. Next, the transparent photo receiving part 13 is formed at the center by the anodic oxidation of the conductive film 12 by utilizing a mask provided with an aperture at the center. The band formed common electrode 14 is formed by so placing a transparent conductive layer of an SnO2 as to cover the transparent photo receiving part 13. Further, a band photoelectric conversion material film (amorphous Si film, etc.) 15 formed more widely than the oblique conductive film 12 is provided. A plurality of electric signal lead out discrete electrodes 16 wherein each is isolated are formed on the photoelectric conversion material film 15 in opposition to the photo receiving part 13. Thereby, a sensor of a high resolution is obtained. |
