| 摘要 |
PURPOSE:To enable the formation of a vapor-deposited film having the side face roughly perpendicular to a substrate in the stage of forming the vapor-deposited film on the substrate by disposing plural heaters for heating vapor sources in a specific shape. CONSTITUTION:A gate 4 of an alloy of Al and Ti is deposited by evaporation in a gate recess 3 in a working layer 2 of a GaAs epitaxial wafer on a substrate 1. The heaters 7 and 9 for vapor deposition of Al are disposed apart from each other at a prescribed spacing in the direction perpendicular to the surface of the layer 2 within the plane parallel with the surface of the layer 2 in such a way that the respective vapor deposition beams to the recess 3 to be formed with the vapor deposition surface intersect with each other. The heater 8 of the platelike vapor source for heating Ti is disposed apart from a prescribed spacing from the heater 9 on the lower side of said heater within the plane parallel with the surface of the layer 2. If the heaters for heating the vapor sources are disposed in the above-mentioned way, the side face 4a of the film 4 deposited by evaporation and grown is maintained perpendicular. |
