| 摘要 |
PURPOSE:To avoid degeneration of an ITO film at plasma exposure time when a first electrode consisting of a transparently conductive film, an amorphous Si layer and a second electrode of ohmic electrode are to be laminated on a transparently insulating substrate to construct the titled device by a method wherein the transparent electrode is constructed of two layer structure of ITO/SnO2 prescribed respectively for film thickness. CONSTITUTION:The transparent electrode film consisting of the ITO film 6 and the SnO2 film 7 is formed on the transparent substrate 5 consisting of borosilicate glass, the amorphous Si layer 8 is deposited thereon, and the second electrode 9 of Al is adhered thereto. At this time, the films 6, 7 are formed according to vacuum evaporation, etc., and the Si layer 8 is formed according to glow discharge of SiH4, etc. At this construction thickness of the ITO film 6 is made to 600-900Angstrom , thickness of the SnO2 film 7 is prescribed to 80-200Angstrom , and incidence of light to the solar cell thereof is performed to the surface of the substrate 5 having no transparent electrode. Accordingly, the ITO film 6 can be prevented from degeneration due to plasma, and high photoelectric conversion efficiency can be maintained. |
