| 摘要 |
PURPOSE:To obtain a diode controlling the beam wave length precisely by a method wherein an etalon is constituted by arranging the reflecting members opposing to the beam emitting parts at both ends of a semiconductor laser diode. CONSTITUTION:A stem S is bonded on a Peltier element P while a bulk glass BG and a laser diode LD are arranged on the surface ends at specified interval. Next, a lens L, a single mode filter SMF and a transfer optical fiber TF are linearly aligned behind the diode LD. In such a constitution, an etalon is constituted between a reflecting surface M1 of the glass BG and the diode LD further constituting another etalon between the reflecting surfaces M2 and M3 of the fiber SMF. Besides, the other etalon is constituted on the diode LD itself. Through these procedures, total three etalons are arranged in series to make the interval between the reflecting surfaces M1 and M3 (n) times of the beam wave length lambda performing the fine adjustment of the fiber SMF length as for the level adjustment. |
