| 摘要 |
PURPOSE:To obtain a strong joining with the electrode of a smiconductor element by shielding a discharge region, in which Al or its alloy ball is formed, by an inert gas approximately completely. CONSTITUTION:A bonder 2 incorporating a capillary 4 and an electrode 5, a lead frame hold-down jig 6 and racks 7, 8 for encasing are encased previously in a casing 1. The inert gas is injected 9A and discharged 10A, and a wire and the racks are exchanged by opening and closing a door. When the inflow of air is obstructed completely and the ball is formed under the state in which the casing is filled with the inert gas, the normal ball of no eccentricity and constriction is obtained, and can be joined strongly with the electrode of an IC excellently. A controller, etc. for the bonder are installed outside the casing. |
