| 摘要 |
PURPOSE:To obtain an MIS.IC having small parasitic capacity between a source and a drain by a method wherein an insulating layer is formed thick at the lower parts of the source.drain diffusion layers, and thin at the lower part of a channel positioning between the diffusion layers thereof, and a semiconductor supporting the insulating layers thereof is made to low resistance. CONSTITUTION:The Si substrate 31 of low resistivity is used, a resist layer 32 is provided on the surface corresponding to the channel region part, the surface of the substrate on both the sides of the layer 32 is removed according to anisotropic etching, and the SiO2 film 33 is adered on the whole surface. Then the layer 32 is removed together with the film 33 adhered thereon, a heat treatment is performed to generate a thin SiO2 film between the remaining films 33, and the SiO2 film 34 having the flat surface of the whole is obtained. After then, a polycrystalline Si layer 35, an Si3N4 film 36 are laminatedly grown on the whole surface, and after the layer 36 is patterned, a laser beam is irradiated to convert the layer 35 under the layer 36 into a single crystal. Then the layer 36 is removed, a gate electrode 41 is provided at the central part of the layer 39 converted into the single crystal interposing a gate insulating film 40 between them, and the source.drai nregions 42, 43 are formed by diffusion on both sides thereof. |
