| 发明名称 |
Depositing a film onto a substrate including electron-beam evaporation. |
| 摘要 |
<p>A single-crystal ingot I of boron-doped silicon is electron-beam heated in ionised hydrogen. Using an electrode E to apply an electric field from the ingot I towards a heated substrate S, which is r.f. biassed, an amorphous boron-doped silicon film deposits on the substrate S.</p><p>Intrinsic and n-type material can also be produced.</p> |
| 申请公布号 |
EP0104916(A2) |
申请公布日期 |
1984.04.04 |
| 申请号 |
EP19830305705 |
申请日期 |
1983.09.23 |
| 申请人 |
NATIONAL RESEARCH DEVELOPMENT CORPORATION |
发明人 |
ANDERSON, JOSEPH CHAPMAN |
| 分类号 |
B01J19/08;C23C14/00;C23C14/32;H01L21/203;(IPC1-7):23C13/00;01L21/205 |
主分类号 |
B01J19/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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