MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To obtain a flat and uniform compound epitaxial layer containing Al continuously on a substrate by a method wherein a chemical compound layer containing no Al is formed on a compound substrate containing Al and removed by a prescribed solvent and a solution containing the compound as a part of solutes is applied. CONSTITUTION:A P type GaAs substrate 6 is touched by Al+polycrystalline GaAs+Ga solution and polycrystalline GaAs+Ga solution of prescribed composition and a Ga1-xAlxAs layer 7 and a GaAs layer 8 are formed. Then the substrate is brought into contact with Al+polycrystalline GaAs+Ga of a prescribed composition at the prescribed temperature and if the rate of solution is selected not to be saturated at that temperature, the insufficient solute is supplied from the GaAs layer 8 and the layer 8 is removed. After being cooled down, a Ga1-xAlxAs layer 9 is formed. Oxidation of Al on the compound substrate is prevented by the layer 8 so that a flat and uniform epitaxial growth layer is obtained.