| 摘要 |
A thyristor comprises two semiconductor plates, discs or chips, one n-doped and one p-doped, each having a structure of parallel ridges on one major surface and an opposite conducting type layer on the other major surface, two plates, discs or chips being assembled together under pressure with the structured surfaces facing and rotated relative to each other so that the ridges cross and touch to form pn junctions produced by plastic deformation of the crystal lattice and pnpn layer sequences. The invention also includes a method of manufacturing such thyristors.
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