LIQUID PHASE EPITAXIAL GROWING METHOD

摘要

PURPOSE:To form an epitaxial layer free from pits, by placing an absorber for absorbing a volatile component having high vapor pressure in a melt for growth between a semiconductor substrate to be treated and the melt to absorb the element having high vapor pressure by the absober. CONSTITUTION:A melt holding block 4 contg. a melt 14 for growth is slidably mounted on a substrate block 3 having a mounted semiconductor substrate 10 to be treated. An absorber 15 for absorbing an element having high vapor pressure in the melt 14 is placed between the substrate 10 and the melt 14. The element having high vapor pressure evaporated from the heated melt 14 is absorbed in the absorber 15, and an epitaxial layer free from pits is formed.