| 摘要 |
PURPOSE:To obtain a desired pattern on a substrate with high accuracy without deterioration due to heat of a resist by using a film of property of which thermal conductivity in the direction parallel with the substrate is larger than that in the direction vertical to the substrate and is larger than that of an organic film as an intermedate layer. CONSTITUTION:The organic film 5 is formed on the semiconductor substrate 1 in the thickness of approximately 2mum, and a Be0 layer is formed in the thickness of 0.05mum as the intermediate layer 6 is which thermal conductivity in the direction parallel with the surface of the substrate 1 is larger than that in the direction vertical to the substrate and is larger than that of the organic film in the direction parallel with the surface. A resist layer 7 for photoetching is formed in the thickness of 0.5mum, a desired pattern is drawn by electron beams 8, and the resist layer 7 is exposed. Since heat generated in electron-beam drawing is transmitted first in the direction parallel with the surface of the semiconductor substrate by the intermediate layer 6, the resist layer 7 is not deteriorated thermally, and the accuracy of the pattern being drawn is maintained. |
