| 摘要 |
PURPOSE:To obtain a high quality film of a GaN single crystal, by growing a film of an AlN single crystal on a sapphire substrate and by forming a film of a GaN single crystal on the AlN film. CONSTITUTION:Molecular beams of Al from an Al evaporating source 6 and NH3 from a gas introducing pipe 5 are simultaneously fed to a sapphire substrate 4 heated to 1,000-1,200 deg.C in a vessel 1 evacuated to a superhigh degree of vacuum to form a film of an AlN single crystal. The feed of the beams is then stopped, the temp. of the substrate 4 is dropped to 600-700 deg.C, and molecular beams of Ga from a Ga evaporating source 7 and NH3 from the pipe 5 are simultaneously fed to the substrate 4 to form a film of a GaN single crystal on the AlN film on the substrate 4. |
